1.5 0.1 4.5 0.1 2.6 0.15 2.1 0.2 1.3 0.2 0.203max 0.2 0.05 5.1 0.2 features m e c h an i c al d at a maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified b 2 4 0a b 2 5 0a b 2 6 0a m a x i m um r e c u r r ent peak r e v e r s e v o l tage v rrm 40 50 60 v ma x imu m rms v o lt ag e v r w s 28 35 42 v maximum dc blocking voltage v dc 40 50 60 v maximum average forw ord rectified current at c t l (see fig.1) i (av) a peak forw ard surge current 8.3ms single half - c sine-w ave superimposed on rated load(jedec c method) i fsm a maximum instantaneous forw ard voltage at v 2 . 0 a ( n o t e . 1 ) v f v ma x imu m dc r ev e r s e c u r r e nt ( note1 ) @t a =25 o c at rated dc blockjing voltage @t a =100 o c operating junction and storage temperature range t stg o c storage temperature range t j o c note: 1.pulse test:300 s pulse width,1%duty cy cle terminals:solder plated, solderable per mil-std-750, 1111 method 2026 high current capability,low forward voltage drop 0 . 5 i r t y p i c al j u n c t i on c a p a c i t an c e ( n o t e 2) o c / w b 2 3 0a high temperature soldering guaranteed:250 o c/10 1 11 seconds at terminals b220 a --- b260 a 2. p . c . b . m o un t ed w i t h 0 . 2 " x 0 . 2 " ( 5 . 0 x 5 . 0 m m 2 ) c o pp e r pad a r e a s reverse voltage: 20 --- 60 v current: 2.0 a built-in strain relief c a s e : j e d e c d o - 214 a c , m o l ded pla s t i c o v er 1111 passivated chip low power loss,high effciency plastic package has underwriters laboratory 111 flammability classification 94v-0 ma units 20 50.0 2.0 do - 2 14 a c ( s m a ) low profile package for surface mounted applications 30 14 21 20 30 metal silicon junction, majority carrier conduction high surge capability for use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications guardring for overvoltage protection b 2 2 0a polarity: color band denotes cathode end w eigh t : 0 . 00 2 oun c e s , 0 . 0 64 g r am - 65 -- - + 150 -65--- +150 -65--- +150 0 . 5 0 . 7 20 .0 dimensions in millimeters barrier rectifier s surface mount schottky r jl 15.0 diode semiconductor korea www.diode.kr
0.5 0 50 resistive or inductive load p.c.b.mounted on 0.2 x0.2 (5.0x5.0mm) copperpad areas 1.0 60 70 80 90 100 110 120 130 140 150 160 b220a - b24 0a b250a - b260a 1.5 2 . 0 at rated t l 8.3ms single half sine-wave (jedec method) 1 10 100 50 10 20 40 30 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 50 1 0.1 0.01 b220a - b240a b250a - b260a puise width=300 s 1%duty cycle t j =25 c t j =150 c t j =150 c o o o 100 0.1 10 1 0 . 0 0 1 0.01 20 0 406080100 b 22 0a - b 24 0a b 25 0a - b 26 0a t j =75 c t j =125 c t j =75 c 0 0 0 10 1 10 1 0 0 4 0 0 1 0 0 0 . 1 b220 a - b240 a b 2 5 0 a - b 2 6 0 a o t j =25 c f=1.0mhz vsig=50mvp-p average forward current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,microamperes fi g. 5-typical junction capaci tance fi g. 2-- peak forward surge current number of cycles at 60hz instantaneous forward voltage,volts percent of rated peak reverse voltage, reverse voltage,volts lead temperature junction capacitance, pf b220a --- b260a fi g. 3 -- typi cal forward characteri sti cs fi g. 4 -- typi cal reverse characteri stics fi g.1 -- forward derating curve www.diode.kr diode semiconductor korea
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